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| Huandong Electronics Product Specification Silicon NPN Power Transistors 2SC3886A DESCRIPTION With TO-3P(H)IS package High voltage ,high speed APPLICATIONS Horizontal deflection output for high resolution display www..com High speed switching regulator output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 8 15 4 50 150 -55~150 ae ae V A A A W UNIT V V Huandong Electronics Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC3886A SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;IB=0 600 V www..com VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.5A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.5A 1.5 V ICBO Collector cut-off current VCB=1500V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 10 |I A hFE DC current gain IC=1A ; VCE=5V 8 15 fT Transition frequency IC=0.1A ; VCE=10V 1 3 MHz COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 210 pF ts Storage time tf Fall time Resistive load ICP=6A ;IB1=-IB2=1.2A RL=33.3| 2.5 |I s 0.15 |I s 2 Huandong Electronics Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3886A www..com Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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